ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,310, issued on June 30, was assigned to Samsung Display Co. Ltd. (Yongin-Si, South Korea) and Korea University Research and Business Foundat... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,311, issued on June 30, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures with gate volume reduction" was i... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,312, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Integrated circuit device and m... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,313, issued on June 30, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan). "Semiconductor device and manufacturing method of... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,314, issued on June 30, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Metal oxide thin film transistor, semiconductor device an... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,315, issued on June 30, was assigned to ZINITE Corp. (Edmonton, Canada). "Thin-film transistors having a metal nitride source material and ... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,316, issued on June 30, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor and display device comprising the s... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,317, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "MOSFET semiconductor device and method of ma... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,318, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices including buffer layer... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,319, issued on June 30, was assigned to Sony Group Corp. (Tokyo). "Metal oxide semiconductor having epitaxial source drain regions and a me... Read More